MB85R256FPNF-G-JNE2

The MB85R256FPNF-G-JNE2 is a 256kB Ferroelectric Random Access Memory (FRAM) chip in a configuration of 32768 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 10?? read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E?PROM. The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.