PC48F4400P0TB0EE

The PC48F4400P0TB0EE is a 512MB high performance at low voltage Flash Memory with virtual chip enable I/O voltage CE# configuration. The Numonyx® Individually erasable memory blocks are sized for optimum code and data storage. Upon initial power-up or return from reset, the device defaults to asynchronous page-mode read. Configuring the RCR enables synchronous burst-mode reads. In synchronous burst mode, output data is synchronized with user-supplied clock signal. A WAIT signal provides an easy CPU-to-flash memory synchronization. In addition to the enhanced architecture and interface, the device incorporates technology that enables fast factory program and erase operations. Designed for low voltage systems, the P33 family flash memory supports read operations with VCC at 3V and erase and program operations with VPP at 3/9V. Buffered enhanced factory programming provides the fastest flash array programming performance with VPP at 9V, which increases factory throughput.