N25Q512A11GSF40G

The N25Q512A11GSF40G is a 512MB high-performance multiple I/O serial Flash Memory manufactured on 65nm NOR technology. It features execute-in-place functionality, advanced write protection mechanisms and a high-speed SPI-compatible bus interface. Innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. The stacked device contains two 256MB die. From an user standpoint this stacked device behaves as a monolithic device, except with regard to READ MEMORY and ERASE operations and status polling. The device contains a single chip select. The memory is organized as 1024 main sectors that are further divided into 16 subsectors each (16384 subsectors in total). The memory can be erased one 4kB subsector at a time, 64kB sectors at a time or single die (256MB) at a time. The device can also pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.