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БТИЗ транзистор, универсальный, 60 А, 2.05 В, 187 Вт, 600 В, TO-247, 3 вывод(-ов).
The IKW30N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
Вы можете купить IKW30N60T от 1 штуки. Работаем с частными лицами и с юридическими лицами по безналичному расчету.
Доступно на складе 145 штук. Цена IKW30N60T зависит от объёма заказа, минимальная стоимость составляет 653.73 руб.
IKW30N60T
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