M29DW323DT70N6E
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M29DW323DT70N6E характеристики
Флеш память, блок загрузки, 32 Мбит, 4М x 8бит / 2М x 16бит, CFI, Параллельный, TSOP, 48 вывод(-ов).
The M29DW323DT70N6E is a 32MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. The M29DW323DT locates the parameter blocks at the top of the memory address space. The extended block, that can be accessed using a dedicated command. The extended block can be protected and so is useful for storing security information. However the protection is irreversible, once protected the protection cannot be undone. Each block can be erased independently so it is possible to preserve valid data while old data is erased. The blocks can be protected to prevent accidental program or erase commands from modifying the memory. Program and Erase commands are written to the command Interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
Техническое описание
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